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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1451 DESCRIPTION With TO-3PN package High voltage,high speed Built-in damper diode APPLICATIONS For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VEBO IC PC Tj Tstg PARAMETER CHA IN Collector-base voltage Emitter-base voltage E SEM NG TC=25ae OND IC CONDITIONS TOR UC VALUE 1500 6 1.5 50 150 -45~150 ae ae UNIT V V A W Open emitter Open collector Collector current (DC) Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage CONDITIONS IE=200mA; IC=0 IC=1.2A; IB=0.3A IC=1.2A; IB=0.3A VCB=1500V; IE=0 IC=0.3A ; VCE=5V IF=1.5A 6 MIN 6 2SD1451 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE VF TYP. MAX UNIT V 5.0 1.5 0.5 V V mA 2.2 V CHA IN E SEM NG OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1451 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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